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H. von Bardeleben, Jean-Louis Cantin, A. Parisini, A. Bosio, R. Fornari. Conduction mechanism and shallow donor properties in silicon-doped ɛ -G a 2 O 3 thin films: An electron paramagnetic resonance study. Physical Review Materials, 2019, 3 (8), pp.084601. ⟨10.1103/PhysRevMaterials.3.084601⟩. ⟨hal-03924960⟩
Dépôts en texte intégral
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Mots clés
Multilayer
X-ray diffraction
27Aldp
6855Jk
Sputtering
Oxygen deficiency
Channeling
Aluminium
PIXE
EPR
Measurement
Nickel
HfO2
Ageing
Epitaxy
XPS
3C-SiC
AFM
SiC
AC susceptibility
Ion implantation
Hysteresis
XRD
Metal-insulator transition
Pb centers
GaMnAs
27Alda
RBS
Pulsed laser deposition
Ferromagnetic resonance
15N
Photoluminescence
NRP
Transparent conductive oxide TCO
Adsorption
Oxidation
8140Ef
Low energy electron diffraction LEED
Periodic multilayer
Rutherford backscattering spectrometry RBS
Gallium oxide
Silicon Carbide
ADSORPTION DESORPTION HYSTERESIS
2H
27Ald p&α
Ion beam analysis
Adsorbed layers
NRA
Nuclear reaction analysis
Diffusion
Defects
Nitridation
13C
Silicon carbide
Magnetization curves
Annealing
Nanostructures
Zinc oxide
Epitaxial growth
Stable isotopic tracing
Aluminum
Thin film
Acoustic
7630Lh
Atomic Layer Deposition ALD
Acoustic propreties of solid
Raman spectroscopy
Charge exchange
Capillary condensation
Indium oxide
Isotopic Tracing
18O resonance
7550Ee
Interface defects
17Opp
Density functional theory
Nuclear resonance profiling NRP
Growth
ALD
17Op
Al2O3
Magnetic semiconductors
Auger electron spectroscopy AES
Kossel diffraction
Thin films
Evaluation
17O
Nanoparticles
Topological insulators
18O
Magnetic anisotropy
Silicon
Passivation
Topological defects
Energy loss
Silica
Gold
Adsorption Isotherms
Alloys
7550Pp